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Deep ultraviolet LED device with 275nm ultraviolet light
Brand:
SanpItem NO.:
UVC LED：SANP-1Features
Deep ultraviolet LED device with 275nm ultraviolet light
3535 high thermal conductivity aluminum nitride ceramic bracket
Packaging materials such as quartz glass lens and lead-free solder
High reliability, low thermal resistance, adjustable luminous angle, etc.
Applications
Disinfection,Medical phototherapy,Optical sensor,Bioanalysis
Specifications
|
Parameter |
Symbol |
Value |
Unit |
|
Spectral characteristics ( Ta=25℃，RH=30%) |
|
||
|
Wavelength of peak responsivity |
λp |
(270,280] |
nm |
|
Optical power（@80mA） |
Φe |
6-8 |
mW |
|
Drive voltage |
Vf |
5-7 |
V |
|
Half wave width |
△λ |
11±2 |
nm |
|
Light angle |
2Θ1/2 |
120 |
deg. |
|
Antistatic |
HBM |
>8 |
KV |
|
Maximum ratings( Ta=25℃，RH=30%) |
|
||
|
Operation temperature range |
Topr |
-30~60 |
ºC |
|
Storage temperature range |
Tstor |
-40~100 |
ºC |
|
Thermal resistance |
Rjs |
15 |
K/W |
Remarks:
[1] Optical power refers to the total optical output power collected by the integrating sphere;
[2] Thermal resistance refers to the total thermal resistance from the active area of the chip to the patch solder.
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Categories
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Parameter Symbol Value Unit Spectral characteristics (25 ºC) Wavelength of peak responsivity λmax 355 nm Peak responsivity (at 355 nm) Rmax 0.18 A/W Spectral response range - 220~370 nm UV/visible rejection ratio (Rmax/R400 nm) VB >104 - General characteristics (25 ºC) Chip size A 0.25 mm2 Dark current (1 V reverse bias) Id <1 nA Capacitance (at 0 V and 1 MHz) C 23 pF Temperature coefficient Tc -0.1 %/ºC Maximum ratings Operation temperature range Topt -28~85 ºC Storage temperature range Tstor -40~85 ºC Soldering temperature (3 s) Tsold 260 ºC Reverse voltage VRmax 10 V
Broad band UVA+UVB+UVC photodiode Big Chip Size
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NO.558 Lianhua Road, Hefei City, Anhui Province, China
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