English
español
Deep ultraviolet LED device with 275nm and 405 nm ultraviolet light
Brand:
SanpItem NO.:
UVC LED：SANP-2Features
Deep ultraviolet LED device with 275nm and 405 nm ultraviolet light
3535 high thermal conductivity aluminum nitride ceramic bracket
Packaging materials such as quartz glass lens and lead-free solder
High reliability, low thermal resistance, adjustable luminous angle, etc
Applications
Sterilization, medical phototherapy, optical sensors,Biological analysis/detection, anti-counterfeiting detection
UVC Specifications
|
Parameter |
Symbol |
Value |
Unit |
|
Spectral characteristics ( Ta=25℃，RH=30%) |
|
||
|
Wavelength of peak responsivity |
λp |
270~280 |
nm |
|
Optical power |
P0 |
2-4 |
mW |
|
Drive voltage |
Vf |
5-8 |
V |
|
Drive current |
If |
20-40 |
mA |
|
Maximum working current |
Ifmax |
80 |
mA |
UVA Specifications
|
Parameter |
Symbol |
Value |
Unit |
|
Wavelength of peak responsivity |
|
||
|
Optical power |
λp |
405 |
nm |
|
Drive voltage |
P0 |
1-2 |
mW |
|
Drive current |
Vf |
3-4 |
V |
|
Maximum working current |
If |
20-40 |
mA |
|
Wavelength of peak responsivity |
Ifmax |
80 |
mA |
Specifications
|
Parameter |
Symbol |
Value |
Unit |
|
( Ta=25℃，RH=30%) |
|
|
|
|
Optical power |
P0 |
4-8 |
mW |
|
Drive current |
If |
40-80 |
mA |
|
Maximum working current |
Ifmax |
120 |
mA |
|
Half wave width |
△λ |
12 |
nm |
|
Light angle |
2Θ1/2 |
120 |
deg. |
|
Thermal resistance |
RΘj-b |
18 |
℃/W |
Previous:
UV LED chip -Single light beadIf you are interested in our products and want to know more details,please leave a message here,we will reply you as soon as we can.
Categories
Deep ultraviolet LED device with 275nm ultraviolet light
Gallium nitride based material Broad band UVA+UVB+UVC photodiode SMD3535 package
SMD2835 package Broad band UVA+UVB+UVC photodiode
Broad band UVA+UVB+UVC photodiode Big Chip Size
SiC based material Broad band UVA+UVB+UVC photodiode
Indium Gallium nitride based material Broad band UVA+UVB+UVC photodiode Photovoltaic mode operation TO-46 metal housing
Indium Gallium Nitride Based Material TO-46 metal housing
Indium Gallium nitride based material Broad band UVA+UVB+UVC photodiode Special for UVC band
For inquiries about our products or pricelist, please leave to us and we will be in touch within 24 hours.
NO.558 Lianhua Road, Hefei City, Anhui Province, China
Copyright © 2022 Hefei Sanping Electronics Co.,Ltd. All Rights Reserved.
IPv6 network supported
